Plasma Thermal ALD System
This tender is concerning a combined plasma/thermal Atomic Layer Deposition system (p/t-ALD) for research applications with focus on high flexibility regarding source materials (metals and dielectrics), substrate materials and sizes. It should be possible to deposit metal oxides, metal nitrides and pure metal thin films in ALD-mode. The plasma source should be located in a remote position with respect to the substrate (substrate located ‘down-stream’). It must be possible to run the precursors concurrently, thereby enabling multilayer stacks of thin films. To secure high thermal uniformity the reactor should be provided with heated chamber walls. Furthermore, the ALD system should be equipped with a transfer load-lock to secure optimal vacuum conditions in the reaction chamber during sample transfer. All components of the system should be easy to access and maintain. Regarding the precursor delivery system focus must be on fast precursor/gas valves, strict thermal control of the precursors from bottle to reaction chamber, fast purge/cycle times securing high-precision in the thin film layer control and smallest possible foot print for the total system (reaction chamber including load-lock). The possibility for stacked substrates to increase throughput will have high priority. The instrument will be placed in a multiuser environment, so it must be very user friendly and robust. It is essential that the tool supplier can guarantee fast and reliable service even without a service contract.
Deadline
Fristen for modtagelse af bud var på 2015-10-20.
Indkøbet blev offentliggjort på 2015-09-14.
Leverandører
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Indkøbshistorik
| Dato |
Dokument |
| 2015-09-14
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Udbudsbekendtgørelse
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| 2015-11-17
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Bekendtgørelse om indgåede kontrakter
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